Method and system for a configurable low-noise amplifier with programmable band-selection filters

ABSTRACT

Methods and systems for a configurable low-noise amplifier with programmable band-selection filters may comprise a low-noise amplifier (LNA) with a low pass filter coupled to a first input of the LNA and a high pass filter coupled to a second input of the LNA. The low pass filter and the high pass filter may also be coupled to a signal source input. Signals may be received in a pass band of the high pass filter and a pass band of the low pass filter. Input signals in the pass band of the one filter (but not signals in the pass band of the other filter) may be amplified by coupling the one input of the LNA to ground and coupling the other filter to ground utilizing a shunt resistor. The filters may be configurable and may each comprise at least one inductor and at least one capacitor.

CROSS-REFERENCE TO RELATED APPLICATIONS/INCORPORATION BY REFERENCE

This application makes reference to and claims priority to U.S.Provisional Application Ser. No. 61/820,210 filed on May 7, 2013. Theabove identified application is hereby incorporated herein by referencein its entirety.

FIELD

Certain embodiments of the disclosure relate to wireless communication.More specifically, certain embodiments of the disclosure relate to amethod and system for a configurable low-noise amplifier withprogrammable band-selection filters.

BACKGROUND

Low-noise amplifiers are often used in radio frequency (RF)applications, and are used to amplify very weak signals, often receivedfrom an antenna.

Further limitations and disadvantages of conventional and traditionalapproaches will become apparent to one of skill in the art, throughcomparison of such systems with the present invention as set forth inthe remainder of the present application with reference to the drawings.

BRIEF SUMMARY

A system and/or method for a configurable low-noise amplifier withprogrammable band-selection filters substantially as shown in and/ordescribed in connection with at least one of the figures, as set forthmore completely in the claims.

Various advantages, aspects and novel features of the presentdisclosure, as well as details of an illustrated embodiment thereof,will be more fully understood from the following description anddrawings.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a diagram illustrating an example receiver with a differentiallow-noise-amplifier with programmable band selection filters, inaccordance with an example embodiment of the disclosure.

FIG. 2 is a schematic of a differential low-noise amplifier utilizing abalun, in accordance with an example embodiment of the disclosure.

FIG. 3 illustrates a pseudo-differential low-noise amplifier, inaccordance with an example embodiment of the disclosure.

FIG. 4 illustrates a differential low-noise amplifier with programmableband-selection filters, in accordance with an example embodiment of thedisclosure.

FIG. 5 illustrates a differential low-noise amplifier with low-frequencytermination, in accordance with an example embodiment of the disclosure.

FIG. 6 illustrates a differential low-noise amplifier withhigh-frequency termination, in accordance with an example embodiment ofthe disclosure.

FIG. 7 illustrates configurable mode selection for a low-noiseamplifier, in accordance with an example embodiment of the disclosure.

FIG. 8 is a plot of low-noise frequency response, in accordance with anexample embodiment of the disclosure.

DETAILED DESCRIPTION

Certain aspects of the disclosure may be found in a configurablelow-noise amplifier with programmable band-selection filters. Exemplaryaspects of the invention may comprise a low-noise amplifier (LNA) with alow pass filter operably coupled to a first input of the LNA and a highpass filter operably coupled to a second input terminal of the LNA. Thelow pass filter and the high pass filter may also be coupled to a signalsource input. Signals may be received in a pass band of the high passfilter and a pass band of the low pass filter. Input signals in the passband of the high pass filter (but not signals in the pass band of thelow pass filter) may be amplified by operably coupling the first inputof the LNA to ground and operably coupling the low pass filter to groundutilizing a shunt resistor. Input signals in the pass band of the lowpass filter (but not signals in the pass band of the high pass filter)may be amplified by operably coupling the second input of the LNA toground and operably coupling the high pass filter to ground utilizing ashunt resistor. A single-ended input may be received and a differentialoutput signal may be generated at outputs of the LNA. The low passfilter may be operably coupled to the first input of the LNA and thehigh pass filter may be operably coupled to the second input of the LNAutilizing an array of switches. The high pass and low pass filters maybe configurable. The semiconductor die may comprise a complementarymetal-oxide semiconductor (CMOS) die. The low pass filter and the highpass filter may each comprise at least one inductor and at least onecapacitor. A wideband, high frequency, or low frequency mode of the LNAmay be configured based on a signal received from a received signalstrength indicator (RSSI).

As utilized herein, “and/or” means any one or more of the items in thelist joined by “and/or”. As an example, “x and/or y” means any elementof the three-element set {(x), (y), (x, y)}. As another example, “x, y,and/or z” means any element of the seven-element set {(x), (y), (z), (x,y), (x, z), (y, z), (x, y, z)}. As utilized herein, the terms “block”and “module” refer to functions than can be implemented in hardware,software, firmware, or any combination of one or more thereof. Asutilized herein, the term “exemplary” means serving as a non-limitingexample, instance, or illustration. As utilized herein, the term “e.g.,”introduces a list of one or more non-limiting examples, instances, orillustrations.

FIG. 1 is a diagram illustrating an example receiver with a differentiallow-noise-amplifier with programmable band selection filters, inaccordance with an example embodiment of the disclosure. Referring toFIG. 1, there is shown a receiver 100 comprising a pseudo-differentiallow-noise amplifier (LNA) 101, in-phase (I) and quadrature (Q) mixers103A and 103B, local oscillator signals LO_I and LO_Q, gain stages 107Aand 107B, analog-to-digital converters (ADCs) 109A and 109B, aprocessing module 111, and a receive signal strength indicator (RSSI)115. There is also shown an input signal RF IN.

The LNA 101 may be operable to provide amplification to the input signalRF IN with the amplified signal being communicated to the mixers 103Aand 103B. The LNA 101 may comprise a pseudo-differential LNA in that asingle-ended input signal received by the LNA 101 may be output as anamplified differential signal without the need for a balun to convert toa differential signal. Furthermore, the LNA 101 may compriseprogrammable band-selection filters at the inputs to the LNA. Thedifferential output signal may be communicated to the I and Q mixers103A and 103B.

The mixers 103A and 103B may comprise circuitry that is operable togenerate output signals at frequencies that are the sum and thedifference between the input RF signal RF In and the local oscillatorsignal, which comprises either LO_I or LO_Q. The signal RF In may bedown-converted to in-phase and quadrature signals in the receiver 100utilizing the 90 degree phase difference LO signals LO_I and LO_Q. Thefrequency of LO_I and LO_Q may be configured such that it is centeredwithin desired channels. The local oscillators signals LO_I And LO_Q maybe generated by voltage-controlled oscillators in a phase-locked loop,for example, where the frequency of oscillation may be configured by acontrol voltage.

The low-pass filters 105A and 105B may comprise circuitry that isoperable to attenuate signals above a corner frequency and allow signalsbelow the corner frequency to pass. In this manner, sum frequencysignals from the mixers 103A and 103B may be filtered while differencefrequency signals may be allowed to pass through to the gain modules107A and 107B.

The gain modules 107A and 107B may comprise amplifiers for amplifyingthe down-converted and filtered signals. The gain modules 107A and 107Bmay comprise configurable gain levels, and may be controlled by theprocessing module 111, for example. In another example scenario, the LNA101 may comprise a conventional single-ended LNA and the gain modules107A and 107B may comprise pseudo-differential LNAs, as described forthe LNA 101 above.

The ADCs 109A and 109B may comprise circuitry that is operable toconvert analog input signals to digital output signals. Accordingly, theADCs 109A and 109B may receive baseband analog signals from the gainmodules 107A and 107B and may generate digital signals to becommunicated to the processing module 111. In another example scenariowhere the input signal, RF IN, is a digital signal, the ADCs 109A and109B would then not be needed, and the processing of received signalswould be in the digital domain.

The RSSI 115 may comprise suitable circuitry, logic, and/or code thatmay be operable detect the energy of all signals in the RF band. Bydetecting the signal conditions, based on receive signal strength of thedesired signal, a different mode of the receiver 100 may be selected, asshown further with respect to FIGS. 5-7, which may maximize thesignal-to-noise ratio (SNR) at the receiver 100 output. This algorithmcan be implemented on-chip or in a host in which the receiver 100 isintegrated (host not shown).

The processing module 111 may comprise a processor that is operable tocontrol the functions of the receiver 200 and may process receivedbaseband signals to demodulate, deinterlace, and/or perform otherprocessing techniques to the data. The processing module 111 may alsoreceive signals from the RSSI 115 and configure the LNA 101 to be in awideband, high pass, or low pass mode, which are shown in FIGS. 4-6,respectively.

In an example scenario, the receiver 100 may be operable to receive andprocess RF signals. In terrestrial, cable or satellite applications,single-ended RF input to the chip is desirable as it eliminates the needfor an external balun, reducing the cost of the overall systemimplementation. However, single-ended topologies are generally inferiorto their differential counterparts in their distortion performance,especially the even order components. In high-end applications whereperformance is critical and cost is less of a limitation, devices withbaluns and the increase in costs due to the baluns are acceptable.Unfortunately, existing topologies for low noise amplifiers (LNAs) arenot easily configurable between single-ended and differential modes, andperformance sacrifices have to be made, if the same chip or design is tobe used in both differential and single-ended modes.

One possible configuration is to use a simple differential amplifier anddrive it in a pseudo-differential fashion to convert it in to asingle-ended amplifier. While this is relatively easy in principle,performance may degrade significantly due to the following reasons: 1)The impedance looking in to the source from the RF input to the chip inthe single-ended mode goes up by a factor of two, compared to thedifferential case, where RF_P and RF_N are looking into the balun asshown in FIG. 2. Capacitance associated with the RF input trace,components, pads, on-chip attenuator and parasitics (Cp) shown in FIG. 2degrades the bandwidth of the RF input in wideband designs, causing NFand S11 degradation; and 2) Single-ended signal design suffers from poorIP2 performance. IP3 and P1 dB also degrade due to higher signal swingon the single-ended RF input compared to the differential case.

FIG. 2 is a schematic of a differential low-noise amplifier utilizing abalun, in accordance with an example embodiment of the disclosure.Referring to FIG. 2, there is shown receiver front-end 200 comprising aninput voltage source V_(IN), a source resistance, a balun 203, an LNA205, and a differential output 207. There are also shown parasiticcapacitances CP and input resistances RF_(P) and RF_(N) at the inputs tothe LNA 205.

The balun 203 may comprise inductive coils with mutual inductance wherea first terminal of one coil provides an input terminal and the otherterminal of the first coil is coupled to ground, thereby providing asingle-ended input. The terminals of the second coil provide adifferential output that may be coupled to the inputs of the LNA 205.The differential input configuration may enable a lower voltage swing ateach input to the LNA 205.

The LNA 205 may comprise circuitry that is operable to amplify thereceived differential signal received at its input terminals andgenerate the differential output 207. In this scenario, utilizing thebalun 203 to provide a differential signal for the LNA 205, and with thesource resistance R_(S) and parasitic capacitances C_(P), the inputbandwidth is given by (R_(S)/2)*C_(P).

FIG. 3 illustrates a pseudo-differential low-noise amplifier, inaccordance with an example embodiment of the disclosure. Referring toFIG. 3, there are shown a pseudo-differential LNA 300 comprising aninput source V_(IN), a series source resistance R_(S), parasiticcapacitors C_(P), an LNA 305, and a differential output 307. Thepseudo-differential input configuration comprises a grounded input andthe input signal V_(IN) being applied at the other input. While thisconfiguration does generate a differential output signal from asingle-ended input, it suffers from the aforementioned performancedegradation, such as increased input resistance and increased S11microwave reflection.

The input resistance of the LNA 305 is indicated by RF_(P) and RF_(N) inFIG. 3, and the input bandwidth may be given by R_(S)*C_(P). Thisbandwidth limitation may be improved by adding a shunt inductor atRF_(P), but this greatly degrades the low frequency gain and istherefore, not desirable. Furthermore, the input voltage swing is higherin this configuration.

FIG. 4 illustrates a differential low-noise amplifier with programmableband-selection filters, in accordance with an example embodiment of thedisclosure. Referring to FIG. 4, there are shown a differential LNAcircuit 400 comprising a signal source input comprising a voltage sourceV_(IN) and a series source resistance R_(S), parasitic capacitors C_(P),an LNA 405, and a differential output 407. There are also shown a lowpass filter 410 at one input of the LNA 405 and a high pass filter 420at another input to the LNA 405. In an example scenario, the LNA circuit400 may be fully integrated on an integrated circuit die 450, or aportion of the LNA circuit 400 may be off-chip.

The low pass filter 410 may comprise a series inductor L_(LPF) and ashunt capacitor C_(LPF), and the high pass filter 420 may comprise aseries capacitor C_(HPF) and a shunt inductor L_(HPF). These inductorsand capacitors may comprise fixed or variable impedances and/or maycomprise a switchable array of inductors and capacitors.

In the configuration shown in FIG. 4, low frequencies pass through thelow pass filter 410 to the −terminal (P side) of the LNA 405, while thehigh frequencies pass through the high pass filter 420 to the +terminal(N side) of the LNA 405. This allows an all-pass response, enabling theLPF+HPF configuration on the LNA inputs to provide a broad bandimpedance match across the frequency band of interest This matchingtopology allows the addition of the shunt inductor L_(HPF) on the N sideto counter the effect of the capacitance C_(P), without affecting thelow frequency gain through the P side. This ensures good S11 and noisefactor over a broad range of frequencies. It should be noted that thedifferential inputs of the LNA 405 are used as a summing device forsignals going through the low pass and high pass filters 410 and 420,creating an all-pass response at the LNA output 407 (Mode I).

FIG. 5 illustrates a differential low-noise amplifier with low-frequencytermination, in accordance with an example embodiment of the disclosure.Referring to FIG. 5, there are shown a differential LNA circuit 500comprising a signal source input that comprises a voltage source V_(IN)and a series source resistance R_(S), parasitic capacitors C_(P), an LNA505, a shunt capacitor C_(sh), and a differential output 507. There isalso shown a low pass filter 510 at one input of the LNA 505 and a highpass filter 520 at another input to the LNA 505. In an example scenario,the LNA circuit 500 may be fully integrated on an integrated circuit die550, or a portion of the LNA circuit 500 may be off-chip.

As with the low and high pass filters of FIG. 4, the low pass filter 510may comprise a series inductor L_(HPF) and a shunt capacitor C_(LPF),and the high pass filter 520 may comprise a series capacitor C_(HPF) anda shunt inductor L_(HPF). These inductors and capacitors may comprisefixed or variable impedances and/or may comprise a switchable array ofinductors and capacitors.

A low-frequency termination configuration is shown in FIG. 5, with the Pside of the RF path shunted to ground by the shunt resistor R_(sh) andthe P side input of the LNA 505 coupled to ground via the shuntcapacitor C_(sh), as shown in FIG. 5. In this alternative embodiment ofthe previously described matching topology, the low frequency signalsmay be terminated before they hit the LNA 505 by the shunt resistorR_(sh). In instances where the receiver is tuned to a channel in thehigh-pass filter range (mode II), low frequency signals may besignificantly attenuated and performance of the radio greatly improvesin situations where large undesired signals are present at lowerfrequencies.

In an example scenario, the configuration shown in FIG. 4 may be changedto that shown in FIG. 5 utilizing switches in the RF paths. For example,a switch may be activated to couple the P side of the RF input path tothe shunt resistor to ground and the P side input to the LNA may becoupled to ground via another switch, as is shown further with respectto FIG. 7.

The plot to the upper right of the circuit schematic of FIG. 5illustrates the frequency response of the LNA configuration 500 showingattenuated response at low frequency and flat gain at high frequencies.

FIG. 6 illustrates a differential low-noise amplifier withhigh-frequency termination, in accordance with an example embodiment ofthe disclosure. Referring to FIG. 6, there are shown a differential LNAcircuit 600 comprising a signal source input that comprises a voltagesource V_(IN) and a series source resistance R_(S), parasitic capacitorsC_(P), an LNA 605, a shunt capacitor C_(sh), and a differential output607. There is also shown a low pass filter 610 at one input of the LNA605 and a high pass filter 620 at another input to the LNA 605. In anexample scenario, the LNA circuit 600 may be fully integrated on anintegrated circuit die 650, or a portion of the LNA circuit 600 may beoff-chip.

As with the low and high pass filters of FIG. 4, the low pass filter 610may comprise a series inductor L_(LPF) and a shunt capacitor C_(LPF),and the high pass filter 620 may comprise a series capacitor C_(HPF) anda shunt inductor L_(HPF). These inductors and capacitors may comprisefixed or variable impedances and/or may comprise a switchable array ofinductors and capacitors.

A high-frequency termination configuration is shown in FIG. 6, with theN side of the RF path shunted to ground by the shunt resistor R_(sh) andthe N side input of the LNA 605 coupled to ground via the shuntcapacitor C_(sh), as shown in FIG. 6. In this alternative embodiment ofthe previously described matching topology, high frequency signals maybe terminated before they hit the LNA 605 by the shunt resistor R_(sh).In instances where the receiver is tuned to a channel in the low-passfilter range (mode III), high frequency signals may be significantlyattenuated and performance of the radio greatly improves in situationswhere large undesired signals are present at higher frequencies.

In an example scenario, the configuration shown in FIG. 4 may be changedto that shown in FIG. 6 utilizing switches in the RF paths. For example,a switch may be activated to couple the N side of the RF input path tothe shunt resistor to ground and the N side input to the LNA may becoupled to ground via another switch.

The plot to the upper right of the circuit schematic of FIG. 6illustrates the frequency response of the LNA configuration 600 showingattenuated response at high frequency and flat gain at low frequencies.

FIG. 7 illustrates configurable mode selection for a low-noiseamplifier, in accordance with an example embodiment of the disclosure.Referring to FIG. 7, there are shown configurable differential LNAcircuitry 700 comprising a signal source input that comprises a voltagesource V_(IN) and a series source resistance R_(S), parasitic capacitorsC_(P), an LNA 705, switches 730, and a differential output 707. Thereare also shown a low pass filter 710 at one input of the LNA 705 and ahigh pass filter 720 at another input to the LNA 705. In an examplescenario, the LNA circuitry 700 may be fully integrated on an integratedcircuit die 750, or a portion of the LNA circuitry 700 may be off-chip.

As with the low and high pass filters of FIGS. 4-6, the low pass filter710 may comprise a series inductor L_(NPF) and a shunt capacitorC_(LPF), and the high pass filter 720 may comprise a series capacitorC_(HPF) and a shunt inductor L_(HPF). These inductors and capacitors maycomprise fixed or variable impedances and/or may comprise a switchablearray of inductors and capacitors.

The switches 730 may comprise individually-addressable switches, such asCMOS transistors, for example, in the RF paths, for switching them toground via shunt resistors or for switching LNA input terminals toground. In an example scenario, for lower frequency operation, theswitches 730 may be closed on the P side path of the LNA 705, therebycoupling signals that pass through the low pass filter 710 to the LNA705, whereas the switches in the N side path may be switched to theshunt resistor R_(sh) on the input signal side and to ground at the LNA705 input, thereby corresponding to FIG. 6.

Alternatively, for high frequency operation, the switches 730 may beclosed on the N side path of the LNA 705, thereby coupling signals thatpass through the high pass filter 720 to the LNA 705, whereas theswitches in the P side path may be switched to the shunt resistor R_(sh)on the input signal side and to ground at the LNA 705 input, therebycorresponding to FIG. 5. The mode that results in the highest SNR for adesired channel or frequency may be selected utilizing an RSSI, such asdescribed with respect to FIG. 1.

In addition, switches may be integrated in the low pass filter 710 andthe high pass filter 720 for configuring the pass frequency and/orbandwidth in each filter. The switches 730 may be controlled by aprocessor, such as the processing module 111 shown in FIG. 1, forexample.

FIG. 8 is a plot of low-noise frequency response, in accordance with anexample embodiment of the disclosure. Referring to FIG. 8, there isshown a plot 800 of LNA gain versus frequency, illustrating thedifferent modes of the LNA as described in FIGS. 4-7. As shown in theplot 800, in Mode II, where the low pass filter is shunted to groundthrough a shunt resistor and the associated input terminal of the LNA isshorted to ground, as shown in FIG. 5, the LNA gain is low at lowfrequencies and transitions to a high gain in the transition zone.

Similarly, in Mode III, where the high pass filter is shunted to groundthrough a shunt resistor and the associated input terminal of the LNA isshorted to ground, as shown in FIG. 6, the LNA gain is high at lowfrequencies and drops off in the transition zone.

In an embodiment of the disclosure, a method and system may comprise alow-noise amplifier (LNA) with a low pass filter operably coupled to afirst input of the LNA and a high pass filter operably coupled to asecond input terminal of the LNA. The low pass filter and the high passfilter may also be coupled to a signal source input. Signals may bereceived in a pass band of the high pass filter and a pass band of thelow pass filter. Input signals in the pass band of the high pass filter(but not signals in the pass band of the low pass filter) may beamplified by operably coupling the first input of the LNA to ground andoperably coupling the low pass filter to ground utilizing a shuntresistor.

Input signals in the pass band of the low pass filter (but not signalsin the pass band of the high pass filter) may be amplified by operablycoupling the second input of the LNA to ground and operably coupling thehigh pass filter to ground utilizing a shunt resistor. A single-endedinput may be received and a differential output signal may be generatedat outputs of the LNA. The low pass filter may be operably coupled tothe first input of the LNA and the high pass filter may be operablycoupled to the second input of the LNA utilizing an array of switches.

The high pass and low pass filters may be configurable. Thesemiconductor die may comprise a complementary metal-oxide semiconductor(CMOS) die. The low pass filter and the high pass filter may eachcomprise at least one inductor and at least one capacitor. A wideband,high frequency, or low frequency mode of the LNA may be configured basedon a signal received from a received signal strength indicator (RSSI).

Other embodiments may provide a non-transitory computer readable mediumand/or storage medium, and/or a non-transitory machine readable mediumand/or storage medium, having stored thereon, a machine code and/or acomputer program having at least one code section executable by amachine and/or a computer, thereby causing the machine and/or computerto perform the steps as described herein for a configurable low-noiseamplifier with programmable band-selection filters.

Accordingly, aspects of the invention may be realized in hardware,software, firmware or a combination thereof. The invention may berealized in a centralized fashion in at least one computer system or ina distributed fashion where different elements are spread across severalinterconnected computer systems. Any kind of computer system or otherapparatus adapted for carrying out the methods described herein issuited. A typical combination of hardware, software and firmware may bea general-purpose computer system with a computer program that, whenbeing loaded and executed, controls the computer system such that itcarries out the methods described herein.

One embodiment may be implemented as a board level product, as a singlechip, application specific integrated circuit (ASIC), or with varyinglevels integrated on a single chip with other portions of the system asseparate components. The degree of integration of the system willprimarily be determined by speed and cost considerations. Because of thesophisticated nature of modern processors, it is possible to utilize acommercially available processor, which may be implemented external toan ASIC implementation of the present system. Alternatively, if theprocessor is available as an ASIC core or logic block, then thecommercially available processor may be implemented as part of an ASICdevice with various functions implemented as firmware.

The present invention may also be embedded in a computer programproduct, which comprises all the features enabling the implementation ofthe methods described herein, and which when loaded in a computer systemis able to carry out these methods. Computer program in the presentcontext may mean, for example, any expression, in any language, code ornotation, of a set of instructions intended to cause a system having aninformation processing capability to perform a particular functioneither directly or after either or both of the following: a) conversionto another language, code or notation; b) reproduction in a differentmaterial form. However, other meanings of computer program within theunderstanding of those skilled in the art are also contemplated by thepresent invention.

While the invention has been described with reference to certainembodiments, it will be understood by those skilled in the art thatvarious changes may be made and equivalents may be substituted withoutdeparting from the scope of the present invention. In addition, manymodifications may be made to adapt a particular situation or material tothe teachings of the present invention without departing from its scope.Therefore, it is intended that the present invention not be limited tothe particular embodiments disclosed, but that the present inventionwill include all embodiments falling within the scope of the appendedclaims.

What is claimed is:
 1. A semiconductor device, the device comprising: areceiver comprising a low-noise amplifier (LNA) integrated on asemiconductor die; a low pass filter with first and second terminals,the second terminal operably coupled to a first input of the LNA; a highpass filter with first and second terminals, the second terminaloperably coupled to a second input of the LNA; and a signal source inputcoupled to the first terminal of the low pass filter and the firstterminal of the high pass filter, wherein said LNA is operable toreceive signals in a pass band of the high pass filter and a pass bandof the low pass filter.
 2. The device according to claim 1, wherein thereceiver is operable to amplify input signals in the pass band of thehigh pass filter but not signals in the pass band of the low pass filterby operably coupling the first input of the LNA to ground and the secondterminal of the low pass filter to ground utilizing a shunt resistor. 3.The device according to claim 1, wherein the receiver is operable toamplify input signals in the pass band of the low pass filter but notsignals in the pass band of the high pass filter by operably couplingthe second input of the LNA to ground and the second terminal of thehigh pass filter to ground utilizing a shunt resistor.
 4. The deviceaccording to claim 1, wherein the receiver is operable to receive asingle-ended input and generate a differential output.
 5. The deviceaccording to claim 1, wherein an array of switches is utilized foroperably coupling the second terminal of the low pass filter to thefirst input of the LNA and the second terminal of the high pass filterto the second input of the LNA.
 6. The device according to claim 1,wherein the high pass and low pass filters are configurable.
 7. Thedevice according to claim 1, wherein the semiconductor die comprises acomplementary metal-oxide semiconductor (CMOS) die.
 8. The deviceaccording to claim 1, wherein the low pass filter and the high passfilter each comprise at least one inductor and at least one capacitor.9. The device according to claim 1, wherein a wideband, high frequency,or low frequency mode of the LNA is configured based on a signalreceived from a received signal strength indicator (RSSI).
 10. Thedevice according to claim 9, wherein the RSSI is operable to communicatethe signal to a processor that configures the mode of the LNA.
 11. Amethod for communication, the method comprising: in a receivercomprising a low-noise amplifier (LNA) with a low pass filter operablycoupled to a first input of the LNA and a high pass filter operablycoupled to a second input terminal of the LNA, wherein the low passfilter and the high pass filter are also coupled to a signal sourceinput: receiving signals in a pass band of the high pass filter and apass band of the low pass filter.
 12. The method according to claim 11,comprising amplifying input signals in the pass band of the high passfilter but not signals in the pass band of the low pass filter byoperably coupling the first input of the LNA to ground and operablycoupling the low pass filter to ground utilizing a shunt resistor. 13.The method according to claim 11, comprising amplifying input signals inthe pass band of the low pass filter but not signals in the pass band ofthe high pass filter by operably coupling the second input of the LNA toground and operably coupling the high pass filter to ground utilizing ashunt resistor.
 14. The method according to claim 11, comprisingreceiving a single-ended input and generating a differential outputsignal at outputs of the LNA.
 15. The method according to claim 11,comprising operably coupling the low pass filter to the first input ofthe LNA and the high pass filter to the second input of the LNAutilizing an array of switches.
 16. The method according to claim 11,wherein the high pass and low pass filters are configurable.
 17. Themethod according to claim 11, wherein the semiconductor die comprises acomplementary metal-oxide semiconductor (CMOS) die.
 18. The methodaccording to claim 11, wherein the low pass filter and the high passfilter each comprise at least one inductor and at least one capacitor.19. The method according to claim 11, comprising configuring a wideband,high frequency, or low frequency mode of the LNA based on a signalreceived from a received signal strength indicator (RSSI).
 20. Asemiconductor device comprising: a receiver comprising a low-noiseamplifier (LNA) integrated on a semiconductor die, the LNA comprising alow frequency mode, a high frequency mode, and a wideband mode, wherein:wideband mode comprises a low pass filter coupled to a first input ofthe LNA and a high pass filter coupled to a second input of the LNA; lowfrequency mode comprises the low frequency filter coupled to the firstinput of the LNA, the high pass filter shunted to ground utilizing ashunt resistor, and the second input of the LNA coupled to ground; andhigh frequency mode comprises the high frequency filter coupled to thesecond input of the LNA, the low pass filter shunted to ground utilizinga shunt resistor, and the first input of the LNA coupled to ground.